TriQuint, US Army join forces to support GaN device development
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The US Army Research Laboratory (ARL) and TriQuint Semiconductor have entered into a Cooperative Research and Development Agreement (CRADA) to explore and develop new high-frequency and mixed signal integrated circuits (ICs), based on gallium nitride (GaN) technology.
The post TriQuint, US Army join forces to support GaN device development appeared first on Army Technology.
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